IRGSL10B60KD transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery .
turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp / DUT
Driver
DC
L
360V
- 5V DUT / DRIVER
Rg
VCC
DUT
Fig.C.T.3 -.
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